GLOBALFOUNDRIES to Highlight 32nm/28nm Technology Leadership at GSA Expo

Press Releases - AMD

Written by Chris Tom

Wednesday, 30 September 2009 10:31

- New Foundry Poised to Take Leadership Position in Ramping Advanced Technologies at High Volumes With Mature Yields - GSA Emerging Opportunities Expo & Conference 2009 SUNNYVALE, Calif.--As the semiconductor industry begins its transition to the next technology node, GLOBALFOUNDRIES is on track to take its position as the foundry technology leader. On October 1 at the Global Semiconductor Alliance Emerging Opportunities Expo & Conference in Santa Clara, Calif., GLOBALFOUNDRIES (Booth 321) will provide the latest details on its technology roadmap for the 32nm/28nm generations and its innovative “Gate First” approach to building transistors based on High-K Metal Gate (HKMG) technology. “With each new technology generation, semiconductor foundries are increasingly challenged with the economics to sustain R&D and the know-how to bring these technologies to market in high-volume,” said Len Jelinek, director and chief analyst, iSuppli. “With a heritage of rapidly ramping leading-edge technologies to high volumes at mature yields, combined with aggressive investments in capacity and technology, GLOBALFOUNDRIES is uniquely-positioned to challenge for next-generation foundry leadership.” GLOBALFOUNDRIES expects to start volume production of 32nm-SHP (Super High Performance) technology at Fab 1 in the second half of 2010. This technology will employ silicon-on-insulator (SOI) substrates and utilize GLOBALFOUNDRIES’ innovative “Gate First” approach to HKMG, which maximizes power efficiency and transistor scaling while minimizing die size and design complexity when compared to the alternative “Gate Last” approach. Yield progress continues with 24Mb SRAMs in double-digit natural yields on path to 50 per cent natural yields by year-end.

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